Japan 80μm silicon solar cell conversion efficiency reached 15.9%

Japan Institute of Advanced Industrial Science and Technology Research Center, solar power generation solar cell technology in meeting "the outcome of the 5th report" (June 22, 2009 ~ 23) announced that the use of 80 ~ 100μm thickness of the thin silicon wafer manufacturing monocrystalline silicon solar cell energy conversion efficiency reached 15.9 ~ 17.3%.

The electrode unit using screen printing as well as the "sintering process on both sides at the same time," produced. 2cm square, 100μm thick silicon unit generating capacity, the efficiency of 17.3%, open voltage of 0.617V, short-circuit current for 35.5mA/cm2, FF was 0.789. 2cm square, 80μm thick, the efficiency of units 15.9%, open voltage of 0.614V, short-circuit current for 32.8mA/cm2, FF was 0.792.

The view was expressed that the original, if the thickness of silicon wafers to the current level of conversion efficiency will be significantly decreased, but the center by improving the processing based on the convex surface of the light sealing technology and processes, to ensure a high conversion efficiency. Which, 100μm thick solar cell conversion efficiency and capacity of the Research Institute for 180μm thick compared the conversion efficiency of solar cells very little.

Research Institute of the middle class also, 100μm thick polysilicon-based modules to achieve the initial conversion efficiency of the numerical prediction, that is, about 15%. The crystalline silicon Sakata team Gong said, "As the poly-silicon wafer, such as containing the grain boundary, so in comparison with single crystal silicon, thin and more difficult to achieve."

Tens of μm of the silicon wafer under normal circumstances easily broken, inappropriate handling. In order to solve this problem, Nissan Research Institute "in Germany has also developed a 30μm thick wafer handling device, so there is no problem handling."

Jun. 25, 2009